Exploiting Self-Similarity in Geometry for Voxel Based Solid Modeling

[+] Author and Article Information
Tushar Udeshi

Zyvex Corporation, 1321 N Plano Road, Richardson, TX 75081e-mail: tudeshi@zyvex.com

Eric Parker

Inmetrix Corporation, 17 Meadowlake Drive, Heath, TX 75032e-mail: eric@inmetrix.com

J. Comput. Inf. Sci. Eng 4(1), 49-55 (Mar 23, 2004) (7 pages) doi:10.1115/1.1641187 History: Received July 01, 2003; Revised October 01, 2003; Online March 23, 2004
Copyright © 2004 by ASME
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Storage Savings for MEMS device 15640×11046×96 voxels. Array: 49,754,718,720 bytes. Adaptive Octree: 11,900,655,552 bytes. Shared Octree: 24,640,088 bytes. Savings w.r.t full octree: 99.95%.
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Cross section of LPCVD along an edge. The green region shows the actual result. The red is the error introduced by doing a solid modeling offset. The percentage error along the edge is: 1−π/4/π/4=27.32%
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Left: SEM image of a MUMPS device. Right: Geometry generated by MEMulator™. A leading MEMS CAD software package failed when given this input.
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A MEMS device, modeled with 2856×4464×150 voxels. Isosurface extraction time (including squeezing) with results matching: 4.27 seconds. Without results matching on the same PC: 28.78 seconds.
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Quarter of a die (0.5×0.5 cm) simulated and rendered at a quarter of a micron resolution.
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A scenario where results matching should not be used. Component 3 is not connected with any of the lower neighbors.




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